Trinasolar has announced its high-efficiency n-type solar total passivation (TOPAS) heterojunction (HJT) PV modules have achieved an aperture module efficiency of 25.44%, setting a world record for large-area HJT PV modules. The photovoltaic calibration laboratory independently confirms this at the Fraunhofer ISE (CalLab) in Freiburg, Germany. The reported module sets a record for PV modules based on crystalline silicon solar cells with front and back contact structures, which also sets a world record for module efficiency for a silicon module.
n-type TOPAS HJT solar cells
The record-breaking module is based on high-performance n-type TOPAS HJT solar cell with outstanding performance advantages, featuring both a substrate of large-area n-type phosphorus-doped Czochralski silicon (Cz-Si) wafer (210×105 mm2) pioneered by Trinasolar, and the integration of optimized thin-film passivation, fully passivated contact, and progressive variable-frequency-RF p-type emitter. Adopting advanced light-trapping, ultra-high-density packaging, and ultra-low-resistance interconnection has resulted in a significant breakthrough in the module’s optical and electrical performance.
Gao Jifan, Chairman and CEO of Trinasolar, said, “This sets a new world record for large-area single-junction c-Si solar PV modules. It demonstrates the strong technical potential of TOPAS cells and reinforces the technology advantage for Trinasolar as a PV leader.“
Background
Last year, Trinasolar twice set a world record for n-type Cz-Si tunneling oxide passivated contacts (TOPCon) solar cell efficiency, at 25.9% in October and at 26.58% in November. Trina also set a world record in December for n-type Cz-Si HJT solar cell, achieving 27.08% efficiency. This module efficiency record, based on front and back contact cell architecture, demonstrated that front-side efficiency can exceed 25.4% and underlined Trinasolar’s preeminence with advanced silicon PV modules.
